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8 1 nc v cc 7 2 q cntl 6 3 gnd tank 5 4 qb v ref device operating temperature range package semiconductor technical data low power voltage controlled oscillator buffer ordering information MC12147D t a = 40 to 85 c so8 d suffix plastic package case 751 (so8) 8 1 (top view) pin connections order this document by mc12147/d 1 motorola rf/if device data
the mc12147 is intended for applications requiring high frequency signal generation up to 1300 mhz. an external tank circuit is used to determine the desired frequency of operation. the vco is realized using an emittercoupled pair topology. the mc12147 can be used with an integrated pll ic such as the mc12202 1.1 ghz frequency synthesizer to realize a complete pll subsystem. the device is specified to operate over a voltage supply range of 2.7 to 5.5 v. it has a typical current consumption of 13 ma at 3.0 v which makes it attractive for battery operated handheld systems. device to be phased out. note: the mc12147 is not suitable as a crystal oscillator. ? operates up to 1.3 ghz ? spaceefficient 8pin soic or ssop package ? low power 13 ma typical @ 3.0 v operation ? supply voltage of 2.7 to 5.5 v ? typical 900mhz performance phase noise 105 dbc/hz @ 100 khz offset tuning voltage sensitivity of 20 mhz/v ? output amplitude adjustment capability ? two high drive outputs with a typical range from 8.0 to 2.0 dbm the device has two high frequency outputs which make it attractive for transceiver applications which require both a transmit and receive local oscillator (lo) signal. the outputs q and qb are available for servicing the receiver if and transmitter upconverter singleended. in receiver applications, the outputs can be used together if it is necessary to generate a differential signal for the receiver if. because the q and qb outputs are open collector, terminations to the v cc supply are required for proper operation. since the outputs are complementary, both outputs must be terminated even if only one is needed. the q and qb outputs have a nominal drive level of 8dbm to conserve power. if addition signal amplitude is needed, a level adjustment pin (cntl) is available, which when tied to ground, boosts the nominal output levels to 2.0 dbm. external components required for the mc12147 are: (1) tank circuit (lc network); (2) inductor/capacitor to provide the termination for the open collector outputs; and (3) adequate supply voltage bypassing. the tank circuit consists of a highq inductor and varactor components. the preferred tank configuration allows the user to tune the vco across the full supply range. vco performance such as center frequency, tuning voltage sensitivity, and noise characteristics are dependent on the particular components and configuration of the vco tank circuit. pin names pin function v cc cntl tank v ref qb gnd q power supply amplitude control for q, qb output pair tank circuit input bias voltage output open collector output ground open collector output ? motorola, inc. 1999 rev 4 archive information archive information f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc12147 2 motorola rf/if device data maximum ratings (note 1) parameter symbol value unit power supply voltage, pin 1 v cc -0.5 to +7.0 v operating temperature range t a 40 to +85 5 c storage temperature range t stg -65 to +150 5 c maximum output current, pin 5,7 i o 12 ma notes: 1. maximum ratings are those values beyond which damage to the device may occur. functional operation should be restricted to the recommended operating conditions. 2. esd data available upon request. electrical characteristics (v cc = 2.7 to 5.5 vdc, t a = -40 to 85 5 c, unless otherwise noted.) characteristic symbol min typ max unit supply current (cntl=gnd)v cc = 3.3 v v cc = 5.5 v i cc 14.0 23.5 18 28 ma supply current (cntl=open)v cc = 3.3 v v cc = 5.5 v i cc 8 13 13.0 22.5 ma output amplitude (pin 5 & 7) {note 1] v cc = 2.7 v 50 w to v cc v cc = 2.7 v v oh , v ol 2.6 2.1 2.7 2.3 2.4 v output amplitude (pin 5 & 7) [note 1] v cc = 5.5 v 50 w to v cc v cc = 5.5 v v oh , v ol 5.4 4.8 5.5 5.0 5.1 v tuning voltage sensitivity [notes 2 and 3] t stg 20 mhz/v frequency of operation f c 100 1300 mhz csr at 10 khz offset, 1.0 hz bw [notes 2 and 3] (f) 85 dbc/hz csr at 100 khz offset, 1.0 hz bw [notes 2 and 3] (f) 105 dbc/hz frequency stability [notes 2 and 3] supply drift thermal drift f sts f stt 0.8 50 mhz/v khz/ 5 c notes: 1. cntl pin tied to ground. 2. actual performance depends on tank components selected. 3. see figure 12, 750 mhz tank. 4. t = 25 5 c, v cc = 5.0 v + 10% archive information archive information f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc12147 3 motorola rf/if device data operational characteristics a simplified schematic of the mc12147 is found in figure 1. the oscillator incorporates positive feedback by coupling the base of transistor q2 to the collector of transistor q1. in order to minimize interaction between the vco outputs and the oscillator tank transistor pair, a buffer is incorporated into the circuit. this differential buffer is realized by the q3 and q4 transistor pair. the differential buffer drives the gate which contains the primary open collector outputs, q and qb. the output is actually a current which has been set by an internal bias driver to a nominal current of 4ma. additional circuitry is incorporated into the tail of the current source which allows the current source to be increased to approximately 10ma. this is accommodated by the addition of a resistor which is brought out to the cntl pin. when this pin is tied to ground, the additional current is sourced through the current source thus increasing the output amplitude of the q/qb output pair. if less than 10 ma of current is needed, a resistor can be added to ground which reduces the amount of current. application information figure 2 illustrates the external components necessary for the proper operation of the vco buffer. the tank circuit configuration in this figure allows the vco to be tuned across the full operating voltage of the power supply. this is very important in 3v applications where it is desirable to utilize as much of the operating supply range as possible so as to minimize the vco sensitivity (mhz/v). in most situations, it is desirable to keep the sensitivity low so the circuit will be less susceptible to external noise influences. an additional benefit to this configuration is that additional regulation/ filtering can be incorporated into the v cc line without compromising the tuning range of the vco. with the accoupled tank configuration, the v tune voltage can be greater than the v cc voltage supplied to the device. there are four main areas that the user directly influences the performance of the vco. these include tank design, output termination selection, power supply decoupling, and circuit board layout/grounding. the design of the tank circuit is critical to the proper operation of the vco. this tank circuit directly impacts the main vco operating characteristics: 1) frequency of operation 2) tuning sensitivity 3) voltage supply pushing 4) phase noise performance the tank circuit, in its simplest form, is realized as an lc circuit which determines the vco operating frequency. this is described in equation 1. equation 1 f o 1 2 lc in the practical case, the capacitor is replaced with a varactor diode whose capacitance changes with the voltage applied, thus changing the resonant frequency at which the vco tank operates. the capacitive component in equation 1 also needs to include the input capacitance of the device and other circuit and parasitic elements. typically, the inductor is realized as a surface mount chip or a woundcoil. in addition, the lead inductance and board inductance and capacitance also have an impact on the final operating point. figure 1. simplified schematic q3 q4 q1 q2 q5 q6 v cc q qb gnd v ref cntl 136 w 200 w tank v ref archive information archive information f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc12147 4 motorola rf/if device data figure 2. mc12147 typical external component connections 8 7 6 5 1 2 3 4 vco 1. this input can be left open, tied to ground, or tied with a resistor to ground, depending on the desired output amplitude needed at the q and qb output pair. 2. typical values for r1 range from 5.0 k w to 10 k w . q gnd qb v cc cntl tank v ref c2ac3a note 1 cb lt cv r1 v in c2ac3a v cc supply c6a c6b l2b l2a vco output vco output c1 a simplified linear approximation of the device, package, and typical board parasitics has been developed to aid the designer in selecting the proper tank circuit values. all the parasitic contributions have been lumped into a parasitic capacitive component and a parasitic inductive component. while this is not entirely accurate, it gives the designer a solid starting point for selecting the tank components. below are the parameters used in the model. cp parasitic capacitance lp parasitic inductance lt inductance of coil c1 coupling capacitor value cb capacitor for decoupling the bias pin cv varactor diode capacitance (variable) the values for these components are substituted into the following equations: equation 2 ci c1 cv c1 cv cp equation 3 c ci cb ci cb l = lp + lt equation 4 from figure 2, it can be seen that the varactor capacitance (cv) is in series with the coupling capacitor (c1). this is calculated in equation 2. for analysis purposes, the parasitic capacitances (cp) are treated as a lumped element and placed in parallel with the series combination of c1 and cv. this compound capacitance (ci) is in series with the bias capacitor (cb) which is calculated in equation 3. the influences of the various capacitances; c1, cp, and cb, impact the design by reducing the variable capacitance effects of the varactor which controls the tank resonant frequency and tuning range. now the results calculated from equation 2, equation 3 and equation 4 can be subs tituted into equation 1 to calculate the actual frequency of the tank. to aid in analysis, it is recommended that the designer use a simple spreadsheet based on equation 1 thr ough equation 4 to calculate the frequency of operation for various varactor/inductor selections before determining the initial starting condition for the tank. the two main components at the heart of the tank are the inductor (lt) and the varactor diode (cv). the capacitance of a varactor diode junction changes with the amount of reverse bias voltage applied across the two terminals. this is the element which actually atuneso the vco. one characteristic of the varactor is the tuning ratio which is the ratio of the capacitance at specified minimum and maximum voltage points. for characterizing the mc12147, a matsushita (panasonic) varactor ma393 was selected. this device has a typical capacitance of 11 pf at 1v and 3.7 pf at 4v and the cv characteristic is fairly linear over that range. similar performance was also acheived with loral varactors. a multilayer chip inductor was used to realize the lt component. these inductors had typical q values in the 3550 range for frequencies between 500 and 1000mhz. note: there are many suppliers of high performance varactors and inductors an motorola can not recommend one vendor over another. the q (quality factor) of the components in the tank circuit has a direct impact on the resulting phase noise of the oscillator. in general, the higher the q, the lower the phase noise of the resulting oscillator. in addition to the lt and cv components, only high quality surfacemount rf chip capacitors should be used in the tank circuit. these capacitors should have very low dielectric loss (highq). at a minimum, the capacitors selected should be operating 100 mhz below their series resonance point. as the desired frequency of operation increases, the values of the c1 and cb capacitors will decrease since the series resonance point archive information archive information f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc12147 5 motorola rf/if device data is a function of the capacitance value. to simplify the selection of c1 and cb, a table has been constructed based on the intended operating frequency to provide recommended starting points. these may need to be altered depending on the value of the varactor selected. frequency c1 cb 200 500 mhz 47 pf 47 pf 500 900 mhz 5.1 pf 15 pf 900 1200 mhz 2.7 pf 15 pf the value of the cb capacitor influences the vco supply pushing. to minimize pushing, the cb capacitor should be kept small. since c1 is in series with the varactor, there is a strong relationship between these two components which influences the vco sensitivity. increasing the value of c1 tends to increase the sensitivity of the vco. the parasitic contributions lp and cp are related to the mc12147 as well as parasitics associated with the layout, tank components, and board material selected. the input capacitance of the device, bond pad, the wire bond, package/lead capacitance, wire bond inductance, lead inductance, printed circuit board layout, board dielectric, and proximity to the ground plane all have an impact on these parasitics. for example, if the ground plane is located directly below the tank components, a parasitic capacitor will be formed consisting of the solder pad, metal traces, board dielectric material, and the ground plane. the test fixture used for characterizing the device consisted of a two sided copper clad board with ground plane on the back. nominal values where determined by selecting a varactor and characterizing the device with a number of different tank/ frequency combinations and then performing a curve fit with the data to determine values for lp and cp. the nominal values for the parasitic effects are seen below: parasitic capacitance parasitic inductance cp lp 4.2 pf 2.2 nh these values will vary based on the users unique circuit board configuration. basic guidelines: 1. select a varactor with high q and a reasonable capacitance versus voltage slope for the desired frequency range. 2. select the value of cb and c1 from the table above . 3. calculate a value of inductance (l) which will result in achieving the desired center frequency. note that l includes both lt and lp. 4. adjust the value of c1 to achieve the proper vco sensitivity. 5. readjust value of l to center vco. 6. prototype vco design using selected components. it is important to use similar construction techniques and materials, board thickness, layout, ground plane spacing as intended for the final product. 7. characterize tuning curve over the voltage operation conditions. 8. adjust, as necessary, component values l,c1, and cb to compensate for parasitic board effects. 9. evaluate over temperature and voltage limits. 10. perform worst case analysis of tank component variation to insure proper vco operation over full temperature and voltage range and make any adjustments as needed. outputs q and qb are open collector outputs and need a inductor to v cc to provide the voltage bias to the output transistor. in most applications, dcblocking capacitors are placed in series with the output to remove the dc component before interfacing to other circuitry. these outputs are complementary and should have identical inductor values for each output. this will minimize switching noise on the v cc supply caused by the outputs switching. it is important that both outputs be terminated, even if only one of the outputs is used in the application. referring to figure 2, the recommended value for l2a and l2b should be 47 nh and the inductor components resonance should be at least 300 mhz greater than the maximum operating frequency. for operation above 1100 mhz, it may be necessary to reduce that inductor value to 33 nh. the recommended value for the coupling capacitors c6a, c6b, and c7 is 47 pf. figure 2 also includes decoupling capacitors for the supply line as well as decoupling for the output inductors. good rf decoupling practices should be used with a series of capacitors starting with high quality 100 pf chip capacitors close to the device. a typical layout is shown below in figure 3. the output amplitude of the q and qb can be adjusted using the cntl pin. refering to figure 1, if the cntl pin is connected to ground, additional current will flow through the current source. when the pin is left open, the nominal current flowing through the outputs is 4 ma. when the pin is grounded, the current increases to a nominal value of 10 ma. so if a 50 ohm resistor was connected between the outputs and vcc, the output amplitude would change from 200 mv pp to 500 mv pp with an additional current drain for the device of 6 ma. to select a value between 4 and 10 ma, an external resistor can be added to ground. the equation below is used to calculate the current. i out (nom) (200 136 r ext ) 0.8v 200 (136 r ext ) figure 4 through figure 13 illustrate typical performance achieved with the mc12147. the curves illustrate the tuning curve, supply pushing characteristics, output power, current drain, output spectrum, and phase noise performance. in most cases, data is present for both a 750 mhz and 1200 mhz tank design. the table below illustrates the component values used in the designs. component 750mhz tank 1200mhz tank units r1 5000 5000 w c1 5.1 2.7 pf lt 4.7 1.8 nh cv 3.7 @ 1.0 v 11 @ 4.0 v 3.7 @ 1.0 v 11 @ 4.0 v pf cb 100* 15 pf c6, c7 47 33 pf l2 47 47 nh * the value of cb should be reduced to minimize pushing. archive information archive information f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc12147 6 motorola rf/if device data ????? ????? ????? ?? ?? ?? figure 3. mc12147 typical layout (not to scale) r1 v tune c1 lt cb varactor r2 c3a c2a 1 vco output 1 vco output 2 c6a c6b c3b c2b l2a l2b ??? ??? ??? = via to/or power plane = via to/or ground plane archive information archive information f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc12147 7 motorola rf/if device data 650 675 700 725 750 775 800 825 850 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 figure 4. typical vco tuning curve, 750 mhz tank tuning voltage (v) frequency of operation (mhz) 40 5 c +25 5 c +85 5 c 730 732 734 736 738 740 742 744 746 748 750 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 figure 5. typical supply pushing, 750mhz tank v cc supply voltage (v) frequency of operation (mhz) 40 5 c +25 5 c +85 5 c archive information archive information f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc12147 8 motorola rf/if device data 10 9 8 7 6 5 4 3 2 1 0 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 figure 6. typical q/qb output power versus supply, 750 mhz tank v cc supply voltage (v) output power (dbm) 40 5 c +25 5 c +85 5 c +25 5 c (lp) figure 7. typical current drain versus supply, 750 mhz tank cntl to gnd cntln/c 5.0 5 10 15 20 25 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 v cc supply voltage (v) current drain (ma) 40 5 c +25 5 c +85 5 c +25 5 c (lp) cntl to gnd cntln/c archive information archive information f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc12147 9 motorola rf/if device data 1150 1175 1200 1225 1250 1275 1300 0 0.6 1.2 1.8 2.4 3.0 3.6 4.2 4.8 figure 8. typical vco tuning curve, 1200 mhz tank (v cc = 5.0 v) tuning voltage (v) frequency of operation (mhz) 40 5 c +25 5 c +85 5 c 1190 1192 1194 1196 1198 1200 1202 1204 1206 1208 1210 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 figure 9. typical supply pushing, 1200 mhz tank v cc supply voltage (v) frequency of operation (mhz) 40 5 c +25 5 c +85 5 c archive information archive information f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc12147 10 motorola rf/if device data 4 3 2 1 0 1 2 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 figure 10. q/qb output power versus supply, 1200 mhz tank v cc supply voltage (v) output power (dbm) 40 5 c +25 5 c +85 5 c figure 11. typical vco output spectrum 5.0 0 10 20 30 40 50 60 70 80 90 100 start 1.0mhz rbw 1.0mhz vbw 1.0mhz stop 10.0ghz swp 200ms atten 10 rl 0dbm 10db/ marker 909mhz 7.1dbm amplitude (dbm) archive information archive information f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc12147 11 motorola rf/if device data figure 12. typical phase noise plot, 750 mhz tank figure 13. typical phase noise plot, 1200 mhz tank 1k 10k 100k 1m 10m 100 40m 170 150 100 50 0 125 75 25 1k 10k 100k 1m 10m 100 40m 170 150 100 50 0 125 75 25 (f) [dbc/hz] vs f[hz] dbc/hz dbc/hz (f) [dbc/hz] vs f[hz] hp 3048a carrier 784.2mhz hp 3048a carrier 1220mhz archive information archive information f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc12147 12 motorola rf/if device data d suffix plastic package case 75106 (so8) issue t seating plane 1 4 58 a 0.25 m cb ss 0.25 m b m h c x 45 l dim min max millimeters a 1.35 1.75 a1 0.10 0.25 b 0.35 0.49 c 0.19 0.25 d 4.80 5.00 e 1.27 bsc e 3.80 4.00 h 5.80 6.20 h 0 7 l 0.40 1.25 0.25 0.50 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. dimensions are in millimeter. 3. dimension d and e do not include mold protrusion. 4. maximum mold protrusion 0.15 per side. 5. dimension b does not include dambar protrusion. allowable dambar protrusion shall be 0.127 total in excess of the b dimension at maximum material condition. d e h a b e b a1 c a 0.10 outline dimensions motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo para meters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all ope rating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under it s patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical imp lant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : motorola japan ltd.; spd, strategic planning office, 141, p.o. box 5405, denver, colorado 80217. 13036752140 or 18004412447 4321 nishigotanda, shinagawaku, tokyo, japan. 813 54878488 customer focus center: 18005216274 mfax e : rmfax0@email.sps.mot.com touchtone 1 6022446609 asia / pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, motorola fax back system us & canada only 18007741848 2, dai king street, tai po industrial estate, tai po, n.t., hong kong. http://sps.motorola.com/mfax/ 85226668334 home page : http://motorola.com/sps/ mc12147/d & archive information archive information f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .

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